DatasheetsPDF.com

SSE04N65SL

SeCoS Halbleitertechnologie
Part Number SSE04N65SL
Manufacturer SeCoS Halbleitertechnologie
Description N-Ch Enhancement Mode Power MOSFET
Published Aug 9, 2014
Detailed Description SSE04N65SL Elektronische Bauelemente 4A , 650V , RDS(ON) 2.7Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product ...
Datasheet PDF File SSE04N65SL PDF File

SSE04N65SL
SSE04N65SL

Overview
SSE04N65SL Elektronische Bauelemente 4A , 650V , RDS(ON) 2.
7Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-220P FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain REF.
A B C D E F G Millimeter Min.
Max.
9.
3 10.
6 14.
2 16.
5 2.
7 BSC.
12.
6 14.
7 1.
0 1.
8 0.
4 1.
0 3.
6 4.
8 REF.
H I J K L M Millimeter Min.
Max.
2.
54 BCS.
1.
8 2.
9 2.
6 3.
95 0.
3 0.
6 5.
8 7.
0 1.
2 1.
45 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Single Pulse Avalanche Energy 1 Symbol VDS VGS TC=25° C TC=100° C ID IDM TC=25° C Derate above 25° C EAS TJ, TSTG PD Rating 650 ±30 4 2.
8 16 100 0.
8 202 -55~150 Unit V V A A A W mJ ° C Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case Notes: 1.
L=30mH,IAS=3.
36A, VDD=150V, RG=25Ω, Starting TJ =25° C RθJA RθJC 62.
5 1.
25 ° C /W ° C /W http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
08-Oct-2013 Rev.
A Page 1 of 5 SSE04N65SL Elektronische Bauelemente 4A , 650V , RDS(ON) 2.
7Ω N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min.
Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance Total Gate Charge 1.
2 1.
2 Typ.
Max.
Unit Teat Conditions BVDSS VGS(th) IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr 650 2 - 2.
3 8.
03 2.
57 3.
03 16.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)