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SEMiX202GB066HDs

Semikron International
Part Number SEMiX202GB066HDs
Manufacturer Semikron International
Description Trench IGBT
Published Aug 9, 2014
Detailed Description SEMiX202GB066HDs SEMiX® 2s Trench IGBT Modules SEMiX202GB066HDs Features • Homogeneous Si • Trench = Trenchgate technol...
Datasheet PDF File SEMiX202GB066HDs PDF File

SEMiX202GB066HDs
SEMiX202GB066HDs

Overview
SEMiX202GB066HDs SEMiX® 2s Trench IGBT Modules SEMiX202GB066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no.
E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on...


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