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SEMiX151GB12Vs

Semikron International
Part Number SEMiX151GB12Vs
Manufacturer Semikron International
Description IGBT
Published Aug 9, 2014
Detailed Description SEMiX151GB12Vs SEMiX® 1s SEMiX151GB12Vs Features • Homogeneous Si • VCE(sat) with positive temperature coefficient • Hi...
Datasheet PDF File SEMiX151GB12Vs PDF File

SEMiX151GB12Vs
SEMiX151GB12Vs

Overview
SEMiX151GB12Vs SEMiX® 1s SEMiX151GB12Vs Features • Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V ch...


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