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SSM0410S

SeCoS Halbleitertechnologie
Part Number SSM0410S
Manufacturer SeCoS Halbleitertechnologie
Description N-Channel MOSFET
Published Aug 10, 2014
Detailed Description SSM0410S Elektronische Bauelemente 3A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Pr...
Datasheet PDF File SSM0410S PDF File

SSM0410S
SSM0410S

Overview
SSM0410S Elektronische Bauelemente 3A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM0410S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
K A M SOT-223 4 Top View CB 1 2 3 L E D FEATURES    Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic F G H J MARKING 0410S  REF.
A B C D E F  = Date code Millimeter Min.
Max.
6.
20 6.
70 6.
70 7.
30 3.
30 3.
70 1.
42 1.
90 4.
50 4.
70 0.
60 0.
82 REF.
G H J K L M Millimeter Min.
Max.
0.
10 0.
25 0.
35 2.
30 REF.
2.
90 3.
10 PACKAGE INFORMATION Package SOT-223 MPQ 2.
5K Leader Size 13 inch  G  D  S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1@VGS=10V Pulsed Drain Current Power Dissipation 3 2 Symbol VDS VGS TA=25°C TA=70°C ID IDM TA=25°C PD TJ, TSTG Rating 100 ±20 3 1.
7 5.
5 1.
5 -65~150 Unit V V A A A W °C Operating Junction & Storage Temperature Thermal Resistance Rating Thermal Resistance Junction-Ambient (Max).
Thermal Resistance Junction-Case (Max).
1 1 RθJA RθJC 85 36 °C / W °C / W http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
27-Jun-2013 Rev.
B Page 1 of 4 SSM0410S Elektronische Bauelemente 3A , 100V , RDS(ON) 310 m N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min.
Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current BVDSS VGS(th) gfs IGSS IDSS 100 1 Static Drain-Source On-Resistance 2 Total Gate Charge(10V) Gate-S...


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