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SEMiX202GB12E4s

Part Number	SEMiX202GB12E4s
Manufacturer	Semikron International
Description	IGBT
Published	Aug 10, 2014
Detailed Description	SEMiX202GB12E4s SEMiX® 2s Trench IGBT Modules SEMiX202GB12E4s Features • Homogeneous Si • Trench = Trenchgate technolog...
Datasheet	SEMiX202GB12E4s PDF File

Overview

SEMiX202GB12E4s SEMiX® 2s Trench IGBT Modules SEMiX202GB12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 Ω RGoff,main = 1,0 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 7.
6 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V.
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+ 15 V Tj = 25 °C VCC = 600 V IC = 200 A VGE = +15/-15 V RG on = 2.
4 Ω RG off = 2.
4 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 3600 A/µs Tj = 150 °C di/dtoff = 2100 A/µs Tj = 150 °C Rth(j-c) per IGBT Values 1200 312 240 200 600 -20 .
.
.
20 10 -40 .
.
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175 229 172 200 600 990 -40 .
.
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175 600 -40 .
.
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125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min.
typ.
max.
Unit 1.
80 2.
05 V 2.
20 2.
40 V 0.
8 0.
9 V 0.
7 0.
8 V 5 5.
8 mΩ 7.
5 8 mΩ 5 5.
8 6.
5 V 2.
7 mA mA 12.
3 nF 0.
81 nF 0.
69 nF 1130 nC 3.
75 Ω 253 ns 55 ns 22 mJ 533 ns 113 ns 27.
9 mJ 0.
14 K/W GB © by SEMIKRON Rev.
3 – 18.
06.
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SEMiX202GB12E4s IGBT - Semikron International

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