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SEMIX71GD12E4S

Semikron International
Part Number SEMIX71GD12E4S
Manufacturer Semikron International
Description IGBT
Published Aug 10, 2014
Detailed Description SEMiX71GD12E4s SEMiX® 13 Trench IGBT Modules SEMiX71GD12E4s Features • Homogeneous Si • Trench = Trenchgate technology ...
Datasheet PDF File SEMIX71GD12E4S PDF File

SEMIX71GD12E4S
SEMIX71GD12E4S


Overview
SEMiX71GD12E4s SEMiX® 13 Trench IGBT Modules SEMiX71GD12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 75 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 3 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V.
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+ 15 V Tj = 25 °C VCC = 600 V IC = 75 A VGE = ±15 V RG on = 1  RG off = 1  Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 2500 A/µs Tj = 150 °C di/dtoff = 930 A/µs Tj = 150 °C Rth(j-c) per IGBT Values 1200 115 88 75 225 -20 .
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20 10 -40 .
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175 97 73 75 225 429 -40 .
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175 600 -40 .
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125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min.
typ.
max.
Unit 1.
85 2.
10 V 2.
3 2.
45 V 0.
8 0.
9 V 0.
7 0.
8 V 14.
0 16.
0 m 20.
7 22.
0 m 5 5.
8 6.
5 V 1 mA mA 4.
4 nF 0.
29 nF 0.
24 nF 425 nC 10.
00  160 ns 35 ns 7.
5 mJ 433 ns 79 ns 9 mJ 0.
38 K/W GD © by SEMIKRON Rev.
1 – 03.
07.
2013 1 SEMiX71GD12E4s SEMiX® 13 Trench IGBT Modules SEMiX71GD12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with posit...


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