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SCG4153

SeCoS Halbleitertechnologie
Part Number SCG4153
Manufacturer SeCoS Halbleitertechnologie
Description N-Channel MOSFET
Published Aug 11, 2014
Detailed Description SCG4153 Elektronische Bauelemente 0.8A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product ...
Datasheet PDF File SCG4153 PDF File

SCG4153
SCG4153


Overview
SCG4153 Elektronische Bauelemente 0.
8A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
A M 3 SOT-523 3 MECHANICAL DATA 1 Top View 2 C B 1 2 Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage K E L D F G H J APPLICATION DC-DC converter circuit Load Switch REF.
A B C D E F MARKING N3 = Date Code Millimeter Min.
Max.
1.
5 1.
7 1.
45 1.
75 0.
7 0.
9 0.
7 0.
9 0.
9 1.
1 0.
15 0.
35 REF.
G H J K L M Millimeter Min.
Max.
0.
1 0.
55 REF.
0.
1 0.
2 0.
5 TYP.
0.
25 0.
325 Top View PACKAGE INFORMATION Package SOT-523 MPQ 3K Leader Size 7 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Power Dissipation 1 1 Symbol VDS VGS TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C ID PD ID PD IDM TL TJ, TSTG Rating 10S 20 ±6 0.
88 0.
71 0.
37 0.
23 0.
76 0.
6 0.
27 0.
17 1.
4 260 150, -55~150 0.
8 0.
64 0.
3 0.
19 0.
69 0.
55 0.
22 0.
14 Steady State Unit V V A W A W A ° C ° C Continuous Drain Current Power Dissipation 2 2 Pulsed Drain Current Lead Temperature 3 Operating Junction & Storage Temperature Range http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
12-Mar-2013 Rev.
A Page 1 of 4 SCG4153 Elektronische Bauelemente 0.
8A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case Thermal Resistance 1 Symbol T≦10S Steady State T≦10S Steady State Steady State RθJA RθJA RθJC Rating Typ.
285 340 385 455 260 Max.
335 405 450 545 300 Unit 2 ° C/W Note: 1.
Surface mounted on FR4 Board using 1 square...


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