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SSD12P10

Part Number	SSD12P10
Manufacturer	SeCoS Halbleitertechnologie
Description	P-Channel MOSFET
Published	Aug 11, 2014
Detailed Description	SSD12P10 Elektronische Bauelemente -12A , -100V , RDS(ON) 210mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A su...
Datasheet	SSD12P10 PDF File

Overview

SSD12P10 Elektronische Bauelemente -12A , -100V , RDS(ON) 210mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications.
TO-252(D-Pack) FEATURES     A B C D Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant K M J GE HF MARKING 12P10   Date Code Drain N O P REF.
 PACKAGE INFORMATION Package TO-252 MPQ 2.
5K Leader Size 13 inch Gate A B C D E F G H Millimeter Min.
Max.
6.
35 6.
80 5.
20 5.
50 2.
15 2.
40 0.
45 0.
58 6.
8 7.
5 2.
40 3.
0 5.
40 6.
25 0.
64 1.
20 REF.
J K M N O P Millimeter Min.
Max.
2.
30 REF.
0.
64 0.
90 0.
50 1.
1 0.
9 1.
65 0 0.
15 0.
43 0.
58  Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V Pulsed Drain Current 1 Symbol VDS VGS TC=25°C TC=100°C ID IDM TC=25°C PD TJ, TSTG Rating -100 ±20 -12 -10 -48 35.
7 -55~150 Unit V V A A A W °C Total Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction- case Maximum Thermal Resistance Junction-ambient RθJC RθJA 3.
5 110 °C / W °C / W http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
16-Nov-2012 Rev.
C Page 1 of 4 SSD12P10 Elektronische Bauelemente -12A , -100V , RDS(ON) 210mΩ P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Min.
-100 -1 - Typ.
-0.
096 8 16 4.
4 8.
7 9 14 45 40 1590 110 70 8 Max.
-2.
5 ±100 -1 -25 210 250 12 Unit V V/°C V S nA μA Teat Conditions VGS=0, ID= -250μA Reference to 25°C, ID= -1mA VDS=VGS, ID= -250μA VDS= -10V, ID= -8A VGS...

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SSD12P10 P-Channel MOSFET - SeCoS Halbleitertechnologie

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