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SSD25N10

SeCoS Halbleitertechnologie
Part Number SSD25N10
Manufacturer SeCoS Halbleitertechnologie
Description N-Ch Enhancement Mode Power MOSFET
Published Aug 11, 2014
Detailed Description SSD25N10 Elektronische Bauelemente 25A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A...
Datasheet PDF File SSD25N10 PDF File

SSD25N10
SSD25N10

Overview
SSD25N10 Elektronische Bauelemente 25A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD25N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available A B C D GE K HF MARKING 25N10 Date Code 2 Drain N O P M J REF.
1 Gate PACKAGE INFORMATION Package TO-252 MPQ 2.
5K Leader Size 13 inch 3 Source A B C D E F G H Millimeter Min.
Max.
6.
35 6.
80 5.
20 5.
50 2.
15 2.
40 0.
45 0.
58 6.
8 7.
5 2.
40 3.
0 5.
40 6.
25 0.
64 1.
20 REF.
J K M N O P Millimeter Min.
Max.
2.
30 REF.
0.
64 0.
90 0.
50 1.
1 0.
9 1.
65 0 0.
15 0.
43 0.
58 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V Pulsed Drain Current 2 4 3 1 Symbol VDS VGS TC=25° C TC=70° C ID IDM TC=25° C PD EAS IAS TJ, TSTG Rating 100 ±20 25 16 45 52 26.
6 20 -55~150 Unit V V A A A W mJ A ° C Total Power Dissipation Single Pulse Avalanche Energy Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case 1 1 RθJA RθJC 110 2.
4 ° C /W ° C /W http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
24-Oct-2012 Rev.
A Page 1 of 4 SSD25N10 Elektronische Bauelemente 25A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Current TJ=25° C Drain-Source Leakage Current TJ=55° C Static Drain-Source On-Resistance Total G...


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