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IRFZ20

Art Chip
Part Number IRFZ20
Manufacturer Art Chip
Description 0.1 Ohm HEXFET
Published Aug 11, 2014
Detailed Description IRFZ20/IRFZ22 HEXFET ® TRANSISTORS 50 Volt, 0.1 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology has expanded ...
Datasheet PDF File IRFZ20 PDF File

IRFZ20
IRFZ20

Overview
IRFZ20/IRFZ22 HEXFET ® TRANSISTORS 50 Volt, 0.
1 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements, International Rectifier’s highly efficient geometry and unique processing of the HEXFET have been combined to create the lowest on resistance per device performance, in addition to this feature all HEXFETs have documented reliability and parts per million quality I The HEXFET transistors also offer all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio are operated from low voltage batteries, such as automotive, portable equipment, etc.
Product Summary Part Number VDS IRFZ20 50V IRFZ22 50V Features: Extremely Low RDS(on) Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Parts Per Million Quality RDS(on) 0.
10Ω 0.
12Ω ID 15A 14A www.
artschip.
com 1 IRFZ20/IRFZ22 HEXFET ® TRANSISTORS Absolute Maximum Ratings VDS VDGR ID@TC=25 ID@ Tc=100 IDM VGS PD@ Tc=25 ILM TJ Tstg Parameter Drain-Source Voltage Drain-Gate Voltage (RGS = 20KΩ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current Gate –Source Voltage Max.
Power Dissipation Linear Derating Factor Inductive Current, Clamped Operating Junction and Storage Temperature Range Lead Temperature IRFZ20 IRFZ22 50 50 50 50 15 14 10 9.
0 60 56 ±20 40 (See Fig.
14) 0.
32 (See Fig.
14) (See Fig.
15 and 16) L=100µH 60 56 -56 to 150 300 (0.
063 in.
(1.
6mm) from case for 10s) Units V V A A A V W W/K A Electrical Characteristics @ Tc=25 Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSS Gate-Source Leakage Forward IGSS Gate-Source Leakage Reverse IDSS Zero Gate Voltage Drain Current (Unless...


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