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SKM400GAL12V

Semikron International
Part Number SKM400GAL12V
Manufacturer Semikron International
Description IGBT
Published Aug 11, 2014
Detailed Description SKM400GAL12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V...
Datasheet PDF File SKM400GAL12V PDF File

SKM400GAL12V
SKM400GAL12V

Overview
SKM400GAL12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 612 467 400 1200 -20 .
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20 Tj = 125 °C 10 -40 .
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175 Tc = 25 °C Tc = 80 °C 440 329 400 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1200 1980 -40 .
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175 Tc = 25 °C Tc = 80 °C 440 329 400 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1200 1980 -40 .
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175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 500 -40 .
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125 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 VGES tpsc Tj IF IFnom Inverse diode SKM400GAL12V Features • V-IGBT = 6.
Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4.
Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no.
E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Tj = 175 °C IFRM IFSM Tj Freewheeling dio...


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