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SKM200GM12T4

Semikron International
Part Number SKM200GM12T4
Manufacturer Semikron International
Description IGBT
Published Aug 11, 2014
Detailed Description SKM200GM12T4 SEMITRANS® 3 Fast IGBT4 Modules SKM200GM12T4 Features • IGBT4 = 4. generation fast trench IGBT (Infineon) ...
Datasheet PDF File SKM200GM12T4 PDF File

SKM200GM12T4
SKM200GM12T4


Overview
SKM200GM12T4 SEMITRANS® 3 Fast IGBT4 Modules SKM200GM12T4 Features • IGBT4 = 4.
generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4.
generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no.
E63532 Typical Applications* • Matrix Inverter • Bidirectional switch Remarks • Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 .
.
.
+150°C • Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 7.
6 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V.
.
.
+ 15 V Tj = 25 °C VCC = 600 V IC = 200 A VGE = ±15 V RG on = 1  RG off = 1  Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 5500 A/µs Tj = 150 °C di/dtoff = 2300 A/µs Tj = 150 °C Rth(j-c) per IGBT Values 1200 313 241 200 600 -20 .
.
.
20 10 -40 .
.
.
175 229 172 200 600 990 -40 .
.
.
175 500 -40 .
.
.
125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min.
typ.
max.
Unit 1.
80 2.
05 V 2.
20 2.
40 V 0.
8 0.
9 V 0.
7 0.
8 V 5.
00 5.
75 m 7.
50 8.
00 m 5 5.
8 6.
5 V 2.
7 mA mA 12.
3 nF 0.
81 nF 0.
69 nF 1130 nC 3.
8  185 ns 40 ns 21 mJ 425 ns 82 ns 20 m...



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