DatasheetsPDF.com

SKiM459GD12E4

Semikron International
Part Number SKiM459GD12E4
Manufacturer Semikron International
Description IGBT
Published Aug 12, 2014
Detailed Description SKiM459GD12E4 SKiM® 93 Trench IGBT Modules SKiM459GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter t...
Datasheet PDF File SKiM459GD12E4 PDF File

SKiM459GD12E4
SKiM459GD12E4

Overview
SKiM459GD12E4 SKiM® 93 Trench IGBT Modules SKiM459GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C GD Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC IC Tj = 25 °C λpaste=0.
8 W/(mK) Tj = 175 °C λpaste=2.
5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C ICnom ICRM VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse - Diode IF λpaste=0.
8 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IF λpaste=2.
5 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IFnom IFRM IFRM = 3 x IFnom IFSM 10 ms, sin 180°, Tj = 150 °C Tj Module It(RMS) Tterminal = 80 °C, Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions Inverter - IGBT VCE(sat) IC = 450 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VCE0 chiplevel Tj = 25 °C Tj = 150 °C rCE VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE(th) VGE = VCE, IC = 18 mA ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz QG VGE=- 8 V.
.
.
+ 15 V RGint Tj = 25 °C td(on) tr Eon td(off) tf VCC = 600 V Tj = 150 °C IC = 450 A RG on = 1.
3 Ω RG off = 1.
3 Ω Tj = 150 °C Tj = 150 °C di/dton = 8340 A/µs Tj = 150 °C di/dtoff = 3660 A/µs Tj = 150 °C Eoff VGE = +15/-15 V Tj = 150 °C Rth(j-s) Rth(j-s) per IGBT, λpaste=0.
8 W/(mK) per IGBT, λpaste=2.
5 W/(mK) © by SEMIKRON...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)