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SSG4530C

SeCoS Halbleitertechnologie
Part Number SSG4530C
Manufacturer SeCoS Halbleitertechnologie
Description N & P-Ch Enhancement Mode Power MOSFET
Published Aug 12, 2014
Detailed Description SSG4530C Elektronische Bauelemente N-Ch: 5.3A, 30V, RDS(ON) 82 mΩ P-Ch: -5.2A, -30V, RDS(ON) 80 mΩ N & P-Ch Enhancement ...
Datasheet PDF File SSG4530C PDF File

SSG4530C
SSG4530C


Overview
SSG4530C Elektronische Bauelemente N-Ch: 5.
3A, 30V, RDS(ON) 82 mΩ P-Ch: -5.
2A, -30V, RDS(ON) 80 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SOP-8 B L D M FEATURES Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology A C N J H G Millimeter Min.
Max.
5.
8 6.
20 4.
80 5.
00 3.
80 4.
00 0° 8° 0.
50 0.
93 0.
19 0.
25 1.
27 TYP.
K F E REF.
A B C D E F G REF.
H J K L M N APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless telephones Millimeter Min.
Max.
0.
35 0.
51 0.
375 REF.
45° 1.
35 1.
75 0.
10 0.
25 0.
25 REF.
Top View PACKAGE INFORMATION Package SOP-8 MPQ 2.
5K Leader Size 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C ID TA = 70° C IDM IS PD TA = 70° C N-CH 30 ±20 5.
3 4.
2 20 1.
3 2.
1 1.
3 P-CH -30 ±20 -5.
2 -4.
1 -20 -1.
3 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25° C Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦10 sec Steady State RθJA 62.
5 110 ° C/W ° C/W Notes: 1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
30-Jul-2012 Rev.
A Page 1 of 6 SSG4530C Elektronische Bauelemente N-Ch: 5.
3A, 30V, RDS(ON) 82 mΩ P-Ch: -5.
2A, -30V, RDS(ON) 80 mΩ N & P-Ch Enhancement ...


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