DatasheetsPDF.com

SUM2153

SeCoS Halbleitertechnologie
Part Number SUM2153
Manufacturer SeCoS Halbleitertechnologie
Description N-channel MOSFET
Published Aug 12, 2014
Detailed Description SUM2153 Elektronische Bauelemente 0.81A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product...
Datasheet PDF File SUM2153 PDF File

SUM2153
SUM2153

Overview
SUM2153 Elektronische Bauelemente 0.
81A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
A E SOT-363 L MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage F DG B C K H J APPLICATION DC-DC converter circuit Load Switch REF.
A B C D E F MARKING 53 Millimeter Min.
Max.
1.
80 2.
20 1.
80 2.
45 1.
15 1.
35 0.
80 1.
10 1.
10 1.
50 0.
10 0.
35 REF.
G H J K L Millimeter Min.
Max.
0.
100 REF.
0.
525 REF.
0.
08 0.
25 8° 0.
650 TYP.
PACKAGE INFORMATION Package SOT-363 MPQ 3K Leader Size 7 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Power Dissipation 1 1 Symbol VDS VGS TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C ID PD ID PD IDM TL TJ, TSTG Rating 10S 20 ±6 0.
89 0.
71 0.
38 0.
24 0.
76 0.
61 0.
28 0.
17 1.
4 260 150, -55~150 0.
81 0.
64 0.
31 0.
2 0.
69 0.
55 0.
23 0.
15 Steady State Unit V V A W A W A ° C ° C Continuous Drain Current Power Dissipation 2 2 Pulsed Drain Current Lead Temperature 3 Operating Junction & Storage Temperature Range http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
11-Jan-2013 Rev.
A Page 1 of 4 SUM2153 Elektronische Bauelemente 0.
81A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS Parameter Symbol Single Operation Junction-to-Ambient Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case Thermal Resistance 1 Rating Typ.
276 328 375 446 260 310 366 415 498 265 Max.
325 395 445 532 300 360 432 486 575 305 Unit 2 T≦10S Steady State T≦10S Steady State Steady State T≦10S Steady State T≦10S Steady State Steady State Rθ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)