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BUK75R3-40B

NXP Semiconductors
Part Number BUK75R3-40B
Manufacturer NXP Semiconductors
Description N-Channel MOSFET
Published Aug 15, 2014
Detailed Description BUK75/764R3-40B TrenchMOS™ standard level FET Rev. 01 — 09 April 2003 Product data 1. Product profile 1.1 Description N-...
Datasheet PDF File BUK75R3-40B PDF File

BUK75R3-40B
BUK75R3-40B

Overview
BUK75/764R3-40B TrenchMOS™ standard level FET Rev.
01 — 09 April 2003 Product data 1.
Product profile 1.
1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability: BUK754R3-40B in SOT78 (TO-220AB) BUK764R3-40B in SOT404 (D2-PAK).
1.
2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible.
1.
3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching.
1.
4 Quick reference data s EDS(AL)S ≤ 961 mJ s ID ≤ 75 A s RDSon = 3.
8 mΩ (typ) s Ptot ≤ 254 W.
2.
Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404 simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) 2 MBK106 Simplified outline mb Symbol [1] mb d g s MBB076 1 2 3 1 3 MBK116 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors BUK75/764R3-40B TrenchMOS™ standard level FET 3.
Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C [1] [2] [1] [2] [2] Conditions RGS = 20 kΩ Min −55 −55 - Max 40 40 ±20 176 75 75 706 254 +175 +175 176 75 706 961 Unit V V V A A A A W °C °C A A A mJ Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Source-drain diode Avalanche ruggedness...


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