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PSMN017-30LL

NXP Semiconductors
Part Number PSMN017-30LL
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 18, 2014
Detailed Description PSMN017-30LL -8 N-channel DFN3333-8 30 V 17 mΩ logic level MOSFET Rev. 4 — 12 December 2011 Product data sheet 1. Prod...
Datasheet PDF File PSMN017-30LL PDF File

PSMN017-30LL
PSMN017-30LL


Overview
PSMN017-30LL -8 N-channel DFN3333-8 30 V 17 mΩ logic level MOSFET Rev.
4 — 12 December 2011 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C.
This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.
DF N3 333 1.
2 Features and benefits  High efficiency due to low switching and conduction losses  Small footprint for compact designs  Suitable for logic level gate drive sources 1.
3 Applications  Battery protection  DC-to-DC converters  Load switching  Power ORing 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.
5 V; ID = 5 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 5 A; Tj = 100 °C; see Figure 13 VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 12 Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 20.
5 15 Max 30 15 37 150 25 23.
4 17 Unit V A W °C mΩ mΩ mΩ Static characteristics NXP Semiconductors PSMN017-30LL N-channel DFN3333-8 30 V 17 mΩ logic level MOSFET Table 1.
Symbol QGD QG(tot) Quick reference data …continued Parameter gate-drain charge total gate charge Conditions VGS = 10 V; ID = 5 A; VDS = 15 V; see Figure 14; see Figure 17 VGS = 4.
5 V; ID = 5 A; VDS = 15 V; see Figure 17; see Figure 14 Min Typ 1.
5 10 5 Max Unit nC nC nC Dynamic characteristics Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 35 A; Vsup ≤ 30 V; unclamped; RGS = 50 Ω 8 mJ 2.
Pinning information Table 2.
Pin 1 2 3 4 5,6,7,8 Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline 8 7 6 5 Graphic symbol D G S 1 2 3 4 Transparent top view SOT873-1 (DFN3333-8) 3.
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