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PMGD370XN

Philips
Part Number PMGD370XN
Manufacturer Philips
Description Dual N-channel extremely low level FET
Published Aug 18, 2014
Detailed Description PMGD370XN Dual N-channel µTrenchMOS™ extremely low level FET MBD128 Rev. 01 — 27 February 2004 Product data 1. Produc...
Datasheet PDF File PMGD370XN PDF File

PMGD370XN
PMGD370XN

Overview
PMGD370XN Dual N-channel µTrenchMOS™ extremely low level FET MBD128 Rev.
01 — 27 February 2004 Product data 1.
Product profile 1.
1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage.
1.
3 Applications s Driver circuits s Switching in portable appliances.
1.
4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 0.
41 W s ID ≤ 0.
74 A s RDSon ≤ 440 mΩ.
2.
Pinning information Table 1: Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description source (s1) gate (g1) drain (d2) source (s2) gate (g2) drain (d1) s1 1 Top view 2 3 MSA370 Simplified outline 6 5 4 Symbol d1 d2 g1 s2 g2 MSD901 SOT363 (SC-88) Philips Semiconductors PMGD370XN Dual N-channel µTrenchMOS™ extremely low level FET 3.
Ordering information Table 2: Ordering information Package Name PMGD370XN SC-88 Description Plastic surface mounted package; 6 leads Version SOT363 Type number 4.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 4.
5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.
5 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −55 −55 Max 30 30 ±12 0.
74 0.
47 1.
49 0.
41 +150 +150 0.
34 0.
69 Unit V V V A A A W °C °C A A Source-drain diode 9397 750 12761 © Koninklijke Philips Electronics N.
V.
2004.
All rights reserved.
Product data Rev.
01 — 27 February ...


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