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BUK9209-40B

NXP Semiconductors
Part Number BUK9209-40B
Manufacturer NXP Semiconductors
Description TrenchMOS logic level FET
Published Aug 19, 2014
Detailed Description BUK9209-40B TrenchMOS™ logic level FET M3D300 Rev. 02 — 12 December 2003 Product data 1. Product profile 1.1 Descripti...
Datasheet PDF File BUK9209-40B PDF File

BUK9209-40B
BUK9209-40B

Overview
BUK9209-40B TrenchMOS™ logic level FET M3D300 Rev.
02 — 12 December 2003 Product data 1.
Product profile 1.
1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.
2 Features s Very low on-state resistance s 185 °C rated s Q101 compliant s Logic level compatible.
1.
3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching.
1.
4 Quick reference data s EDS(AL)S ≤ 242 mJ s ID ≤ 75 A s RDSon = 7.
6 mΩ (typ) s Ptot ≤ 167 W.
2.
Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline [1] Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d mb g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package.
Philips Semiconductors BUK9209-40B TrenchMOS™ logic level FET 3.
Ordering information Table 2: Ordering information Package Name BUK9209-40B D-PAK Description Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped).
Version SOT428 Type number 4.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 5 V; RGS = 50 Ω; starting Tj = 25 °C [1] [2] [1] [2] [1] Conditions RGS = 20 kΩ Min −55 −55 - Max 40 40 ±15 99 75 70 396 167 +185 +185 99 75 396 2...


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