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BUK626R2-40C

NXP Semiconductors
Part Number BUK626R2-40C
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS intermediate level FET
Published Aug 19, 2014
Detailed Description DP AK BUK626R2-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 12 July 2011 Product data sheet 1. Product prof...
Datasheet PDF File BUK626R2-40C PDF File

BUK626R2-40C
BUK626R2-40C

Overview
DP AK BUK626R2-40C N-channel TrenchMOS intermediate level FET Rev.
1 — 12 July 2011 Product data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits  AEC Q101 compliant  Suitable for standard and logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications  12 V Automotive systems  Electric and electro-hydraulic power steering  Motors, lamps and solenoid control  Start-Stop micro-hybrid applications  Transmission control  Ultra high performance power switching 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 40 90 128 V A W Static characteristics RDSon VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 11 5.
2 6.
2 mΩ NXP Semiconductors BUK626R2-40C N-channel TrenchMOS intermediate level FET Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 90 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped ID = 25 A; VDS = 32 V; VGS = 10 V; see Figure 13; see Figure 14 Min Typ Max Unit 113 mJ Table 1.
Symbol EDS(AL)S Avalanche ruggedness Dynamic characteristics QGD 20 nC [1] Continuous current is limited by package.
2.
Pinning information Table 2.
Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 2 1 3 SOT428 (DPAK) 3.
Ordering information Table 3.
Ordering inf...


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