DatasheetsPDF.com

BUK653R5-55C

NXP Semiconductors
Part Number BUK653R5-55C
Manufacturer NXP Semiconductors
Description N-Channel MOSFET
Published Aug 21, 2014
Detailed Description BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 27 October 2010 Product data sheet 1. Product profile ...
Datasheet PDF File BUK653R5-55C PDF File

BUK653R5-55C
BUK653R5-55C

Overview
BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev.
1 — 27 October 2010 Product data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits „ AEC Q101 compliant „ Suitable for standard and logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V and 24 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 55 120 263 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 3.
3 3.
9 mΩ NXP Semiconductors BUK653R5-55C N-channel TrenchMOS intermediate level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 455 mJ Table 1.
Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 120 A; Vsup ≤ 55 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 44 V; VGS = 10 V; see Figure 13; see Figure 14 Dynamic characteristics QGD 56 nC [1] Continuous current is limited by package.
2.
Pinning information Table 2.
Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mb D Simplified outline Graphic symbol G mbb076 S 1 2 3 SOT78A (TO-220AB) 3.
Ordering information Table 3.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)