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BUK6607-75C

NXP Semiconductors
Part Number BUK6607-75C
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS FET
Published Aug 22, 2014
Detailed Description BUK6607-75C N-channel TrenchMOS FET Rev. 2 — 17 November 2010 Product data sheet 1. Product profile 1.1 General descrip...
Datasheet PDF File BUK6607-75C PDF File

BUK6607-75C
BUK6607-75C

Overview
BUK6607-75C N-channel TrenchMOS FET Rev.
2 — 17 November 2010 Product data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V and 24 V Automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditi...


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