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BUK9Y19-100E

NXP Semiconductors
Part Number BUK9Y19-100E
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 23, 2014
Detailed Description LF BUK9Y19-100E 6 November 2013 PA K 56 N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 Product data sheet 1....
Datasheet PDF File BUK9Y19-100E PDF File

BUK9Y19-100E
BUK9Y19-100E

Overview
LF BUK9Y19-100E 6 November 2013 PA K 56 N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 Product data sheet 1.
General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2.
Applications • • • • 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 3.
Quick reference data Table 1.
Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig.
1 Tmb = 25 °C; Fig.
2 VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig.
11 Min Typ Max 100 56 167 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 14.
6 19 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 15 A; VDS = 80 V; Tj = 25 °C; Fig.
13; Fig.
14 1...


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