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PMDPB65UP

Part Number	PMDPB65UP
Manufacturer	NXP Semiconductors
Description	Dual P-Channel MOSFET
Published	Aug 24, 2014
Detailed Description	PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 — 8 March 2011 Product data sheet 1. Product profile 1.1 Gene...
Datasheet	PMDPB65UP PDF File

Overview

PMDPB65UP 20 V, 3.
5 A dual P-channel Trench MOSFET Rev.
2 — 8 March 2011 Product data sheet 1.
Product profile 1.
1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Trench MOSFET technology  1.
8 V RDSon rated for low voltage gate drive  1 kV ElectroStatic Discharge (ESD) protection  Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.
65 mm  Exposed drain pad for excellent thermal conduction 1.
3 Applications  Charging switch for portable devices  DC-to-DC converters  Small brushless D...

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PMDPB65UP Dual P-Channel MOSFET - NXP Semiconductors

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