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SiHF620S

Vishay Siliconix
Part Number SiHF620S
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Aug 28, 2014
Detailed Description IRF620S, SiHF620S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SiHF620S PDF File

SiHF620S
SiHF620S

Overview
IRF620S, SiHF620S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 3.
0 7.
9 Single D FEATURES 200 0.
80 • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Simple Drive Requirements • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC D2PAK (TO-263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
D2PAK (TO-263) SiHF620STRL-GE3a IRF620STRLPbFa SiHF620STL-E3a D2PAK (TO-263) SiHF620STRR-GE3a IRF620STRRPbFa SiHF620STR-E3a G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
D2PAK (TO-263) SiHF620S-GE3 IRF620SPbF SiHF620S-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 200 ± 20 5.
2 3.
3 18 0.
40 0.
025 110 5.
2 5.
0 50 3.
0 5.
0 - 55 to + 150 300d UNIT V A W/°C mJ...


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