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TPN11003NL

Toshiba
Part Number TPN11003NL
Manufacturer Toshiba
Description MOSFETs
Published Aug 29, 2014
Detailed Description TPN11003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11003NL 1. Applications • • Switching Voltage Regulators DC-DC C...
Datasheet PDF File TPN11003NL PDF File

TPN11003NL
TPN11003NL

Overview
TPN11003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11003NL 1.
Applications • • Switching Voltage Regulators DC-DC Converters 2.
Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.
0 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 12.
6 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
1 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Silicon limit) (Tc = 25 ) (t = 1 ms) (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5) (Note 1), (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP...


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