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TPN6R003NL

Toshiba
Part Number TPN6R003NL
Manufacturer Toshiba
Description MOSFETs
Published Aug 29, 2014
Detailed Description TPN6R003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN6R003NL 1. Applications • • Switching Voltage Regulators DC-DC C...
Datasheet PDF File TPN6R003NL PDF File

TPN6R003NL
TPN6R003NL

Overview
TPN6R003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPN6R003NL 1.
Applications • • Switching Voltage Regulators DC-DC Converters 2.
Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 4.
3 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 6.
8 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
2 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 1 2013-04-18 Rev.
1.
0 TPN6R003NL 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current ...


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