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IRGB420UD2

International Rectifier
Part Number IRGB420UD2
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 30, 2014
Detailed Description PD - 9.1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss r...
Datasheet PDF File IRGB420UD2 PDF File

IRGB420UD2
IRGB420UD2

Overview
PD - 9.
1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating f requency (over 5kHz) See Fig.
1 for Current vs.
Frequency curve C UltraFast CoPack IGBT VCES = 500V VCE(sat) ≤ 2.
9V G @VGE = 15V, IC = 7.
5A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.
They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
500 14 7.
5 28 28 7.
0 28 ± 20 60 24 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
———— —- Typ.
——0.
50 — 2 (0.
07) Max.
2.
1 3.
5 —80 —- Units °C/W g (oz) Revision 1 C-617 IRGB420UD2 Electrical Characteristics @ T J = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp.
Coeff.
of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Gate Threshold Voltage Temp.
Coeff.
of Threshold Voltage ...


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