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TPC8134

Toshiba Semiconductor
Part Number TPC8134
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 1, 2014
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TPC8134 1. Applications • Lithium-Ion Secondary Batteries • Power Management Swit...
Datasheet PDF File TPC8134 PDF File

TPC8134
TPC8134

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) TPC8134 1.
Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2.
Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 39 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -0.
1 mA) 3.
Packaging and Internal Circuit TPC8134 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Po...


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