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TPC8132

Toshiba Semiconductor
Part Number TPC8132
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 1, 2014
Detailed Description TPC8132 MOSFETs Silicon P-Channel MOS (U-MOS) TPC8132 1. Applications • • Lithium-Ion Secondary Batteries Power Manage...
Datasheet PDF File TPC8132 PDF File

TPC8132
TPC8132

Overview
TPC8132 MOSFETs Silicon P-Channel MOS (U-MOS) TPC8132 1.
Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2.
Features (1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -0.
2 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single...


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