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K1404

Hitachi Semiconductor
Part Number K1404
Manufacturer Hitachi Semiconductor
Description 2SK1404
Published Sep 1, 2014
Detailed Description 2SK1404 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spe...
Datasheet PDF File K1404 PDF File

K1404
K1404

Overview
2SK1404 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SK1404 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 5 20 5 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1404 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 600 ±30 — — 2.
0 — 3.
0 — — — — — — — — — Typ — — — — — 1.
1 5.
0 1000 250 45 12 45 105 55 0.
9 500 Max — — ±10 250 3.
0 1.
5 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, diF/dt = 100 A/µs I D = 2.
5 A, VGS = 10 V, RL = 12 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2.
5 A, VGS = 10 V *1 I D = 2.
5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.
Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1404 Power vs.
Temperature Derating 60 Channel Dissipation Pch (W) 50 30 ar ea Maximum Safe Operation Area Drain Current ID (A) 10 3 1 0.
3 0.
1 10 10 µs O is per lim at ite ion...


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