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K80E08K3

Toshiba
Part Number K80E08K3
Manufacturer Toshiba
Description TK80E08K3
Published Sep 2, 2014
Detailed Description Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/U...
Datasheet PDF File K80E08K3 PDF File

K80E08K3
K80E08K3

Overview
Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.
5 mΩ (typ.
) : |Yfs| = 135 S (typ.
) : IDSS = 10 µA (max) (VDS = 75 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID ID IDP PD EAS IAR EAR dv/dt Tch Tstg Rating 75 75 ±20 80 70 240 200 107 40 20 12 175 −55~175 Unit V V V A A A W mJ A mJ V/ns °C °C DC (Note 1,4) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Peak diode recovery dv/dt (Note 5) Channel temperature (Note 4) Storage temperature range (Note 4) JEDEC JEITA TOSHIBA TO-220AB SC-46 Weight: 1.
9 g (typ.
) 2 change in Note :Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling 1 Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.
75 83.
3 Unit °C / W °C / W 3 Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, RG = 25 Ω, IAR = 40A Note 3: Repetitive rating: pulse width limited by maximum channel temperature ...


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