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GT45F123

Part Number	GT45F123
Manufacturer	Toshiba Semiconductor
Description	Insulated Gate Bipolar Transistor
Published	Sep 3, 2014
Detailed Description	GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5t...
Datasheet	GT45F123 PDF File

Overview

GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ.
) Peak collector current: ICP = 200 A (max) TO-220SIS package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature range Pulse (Note 1) Tc=25°C Ta=25°C Symbol VCES VGES ICP PC Tj Tstg Rating 300 ± 30 200 26 2 150 −55 to 150 Unit V V A 1.
Gate W °C °C 2.
Collector 3.
Emitter JEDEC - JEITA Note: Using continuously under heavy loads ...

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GT45F123 Insulated Gate Bipolar Transistor - Toshiba Semiconductor

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