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GT40J121

Toshiba
Part Number GT40J121
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Sep 3, 2014
Detailed Description Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applic...
Datasheet PDF File GT40J121 PDF File

GT40J121
GT40J121

Overview
Discrete IGBTs Silicon N-Channel IGBT GT40J121 1.
Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note: The product(s) described herein should not be used for any other application.
2.
Features (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.
20 µs (typ.
) (IC = 40 A) (4) Low saturation voltage: VCE(sat) = 1.
45 V (typ.
) (IC = 40 A) (5) TO-3P(N)IS (Toshiba package name) 3.
Packaging and Internal Circuit GT40J121 TO-3P(N)IS 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.
2.
0 GT40J121 4.
Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (1 ms) Collector current (100 µs) VCES 600 V VGES ±25 IC 40 A ICP 80 100 Collector power dissipation Collector power dis...


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