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GT40J321

Toshiba Semiconductor
Part Number GT40J321
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 3, 2014
Detailed Description GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching...
Datasheet PDF File GT40J321 PDF File

GT40J321
GT40J321

Overview
GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application • • • • FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.
11 μs (typ.
) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.
0 V (typ.
) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ± 25 40 100 30 60 120 150 −55 to 150 Unit V V A Diode forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature A JEDEC W °C °C ⎯ ⎯ 2-16C1C JEITA...


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