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TPH4R606NH

Toshiba
Part Number TPH4R606NH
Manufacturer Toshiba
Description MOSFETs
Published Sep 4, 2014
Detailed Description TPH4R606NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R606NH 1. Applications • • • Switching Voltage Regulators Motor...
Datasheet PDF File TPH4R606NH PDF File

TPH4R606NH
TPH4R606NH

Overview
TPH4R606NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R606NH 1.
Applications • • • Switching Voltage Regulators Motor Drivers DC-DC Converters 2.
Features (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 19 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 3.
8 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
5 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Dra...


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