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TPCA8A02-H

Toshiba Semiconductor
Part Number TPCA8A02-H
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 4, 2014
Detailed Description TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) ...
Datasheet PDF File TPCA8A02-H PDF File

TPCA8A02-H
TPCA8A02-H

Overview
TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.
5±0.
1 1.
27 8 0.
4±0.
1 5 Unit: mm 0.
05 M A • • • • • • • Built-in a schottky barrier diode 6.
0±0.
3 High-speed switching Small gate charge: QSW = 8.
6 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 3.
8 mΩ (typ.
) High forward transfer admittance: |Yfs| = 90 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 1 mA) 5.
0±0.
2 Low forward voltage: VDSF = −0.
6 V (max) 0.
15±0.
05 1 5.
0±0.
2 0.
95±0.
05 4 0.
595 A 0.
166±0.
05 S 1 0.
05 S 4 1.
1±0.
2 0.
6±0.
1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR (Tc=25℃) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 34 102 45 2.
8 Unit V V V A W W 4.
25±0.
2 8 5 0.
8±0.
1 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE JEDEC JEITA TOSHIBA ⎯ ⎯ 2-5Q1A Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Weight: 0.
069 g (typ.
) Drain power dissipation (t = 10 s) (Note 2b) 1.
6 W Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Circuit Configuration 150 34 3.
23 150 −55 to 150 mJ A mJ °C °C 8 7 6 3.
5±0.
2 5 Note: For Notes 1 to 4, refer to the next page.
1 2 3 4 Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semicon...


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