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TK8S06K3L

Toshiba Semiconductor
Part Number TK8S06K3L
Manufacturer Toshiba Semiconductor
Description Silicon N-channel MOSFET
Published Sep 5, 2014
Detailed Description TK8S06K3L MOSFETs Silicon N-channel MOS (U-MOS) TK8S06K3L 1. Applications • • • • Automotive Motor Drivers DC-DC Conve...
Datasheet PDF File TK8S06K3L PDF File

TK8S06K3L
TK8S06K3L

Overview
TK8S06K3L MOSFETs Silicon N-channel MOS (U-MOS) TK8S06K3L 1.
Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2.
Features (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.
0 to 3.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 1 2011-03 2014-08-04 Rev.
4.
0 TK8S06K3L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating 60 ±20 8 16 25 16 8 175 -55 to 175 W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Rth(ch-c) Max 6 Unit /W Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: VDD = 25 V, Tch = 25 (initial), L = 331 µH, RG = 1 Ω, IAR = 8 A Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note: This transistor is sensitive to electrostatic dischar...


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