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TK80S04K3L

Toshiba Semiconductor
Part Number TK80S04K3L
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 5, 2014
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS) TK80S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Swit...
Datasheet PDF File TK80S04K3L PDF File

TK80S04K3L
TK80S04K3L

Overview
MOSFETs Silicon N-channel MOS (U-MOS) TK80S04K3L 1.
Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.
4 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.
0 to 3.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK80S04K3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-04 1 2014-08-04 Rev.
4.
0 TK80S04K3L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 80 A Drain current (pulsed) (Note 1) IDP 160 Power dissipation (Tc = 25) PD 100 W Single-pulse avalanche energy (Note 2) EAS 135 mJ Avalanche current IAR 80 A Channel temperature (Note 3) Tch 175  Storage temperatur...


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