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TK13P25D

Toshiba Semiconductor
Part Number TK13P25D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 5, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK13P25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK13P25D PDF File

TK13P25D
TK13P25D

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK13P25D 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
19 Ω (typ.
) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK13P25D 1: Gate (G) 2: Drain (D) 3: Source (S) DPAK 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Rev...


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