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TJ8S06M3L

Toshiba Semiconductor
Part Number TJ8S06M3L
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Sep 5, 2014
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TJ8S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switc...
Datasheet PDF File TJ8S06M3L PDF File

TJ8S06M3L
TJ8S06M3L

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) TJ8S06M3L 1.
Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit TJ8S06M3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2017-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2011-03 2020-06-24 Rev.
9.
0 TJ8S06M3L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -8 A Drain current (pulsed) (Note 1) IDP -16 Power dissipation (Tc = 25) PD 27 W Single-pulse avalanche energy (Note 2) EAS 19 mJ Avalanche current IAR -8 ...


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