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TJ60S04M3L

Toshiba Semiconductor
Part Number TJ60S04M3L
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 5, 2014
Detailed Description TJ60S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S04M3L 1. Applications • • • • Automotive Motor Drivers DC-DC Con...
Datasheet PDF File TJ60S04M3L PDF File

TJ60S04M3L
TJ60S04M3L

Overview
TJ60S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S04M3L 1.
Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2.
Features (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 4.
8 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 1 2011-03 2014-08-04 Rev.
4.
0 TJ60S04M3L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) ...


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