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TK40S10K3Z

Toshiba Semiconductor
Part Number TK40S10K3Z
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 5, 2014
Detailed Description TK40S10K3Z MOSFETs Silicon N-channel MOS (U-MOS) TK40S10K3Z 1. Applications • • • • Automotive Motor Drivers DC-DC Con...
Datasheet PDF File TK40S10K3Z PDF File

TK40S10K3Z
TK40S10K3Z

Overview
TK40S10K3Z MOSFETs Silicon N-channel MOS (U-MOS) TK40S10K3Z 1.
Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2.
Features (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.
4 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 1 2011-03 2014-08-04 Rev.
5.
0 TK40S10K3Z 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating 100 ±20 40 80 93 98 40 175 -55 to 175 W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Rth(ch-c) Max 1.
6 Unit /W Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: VDD = 25 V, Tch = 25 (initial), L = 99 µH, RG = 25 Ω, IAR = 40 A Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note: This transistor is sensitive to electrost...


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