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TK1P90A

Toshiba Semiconductor
Part Number TK1P90A
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 5, 2014
Detailed Description TK1P90A MOSFETs Silicon N-Channel MOS (π-MOS) TK1P90A 1. Applications • Switching Voltage Regulators 2. Features (1) ...
Datasheet PDF File TK1P90A PDF File

TK1P90A
TK1P90A

Overview
TK1P90A MOSFETs Silicon N-Channel MOS (π-MOS) TK1P90A 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 6.
7 Ω (typ.
) High forward transfer admittance: |Yfs| = 1.
0 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) (Heatsink) 3: Source (S) New PW-Mold 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repe...


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