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TK4Q60DA

Toshiba Semiconductor
Part Number TK4Q60DA
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 9, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK4Q60DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK4Q60DA PDF File

TK4Q60DA
TK4Q60DA

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK4Q60DA 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 1.
7 Ω (typ.
) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.
2 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK4Q60DA New PW-Mold2 1: Gate 2: Drain (heatsink) 3: Source 1 2012-10-16 Rev.
2.
0 TK4Q60DA 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note ...


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