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TK58A06N1

Toshiba Semiconductor
Part Number TK58A06N1
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 10, 2014
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK58A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low dr...
Datasheet PDF File TK58A06N1 PDF File

TK58A06N1
TK58A06N1

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK58A06N1 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 4.
4 mΩ (typ.
) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
5 mA) 3.
Packaging and Internal Circuit TK58A06N1 1: Gate 2: Drain 3: Source TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 105 A Drain current (DC) (Tc = 25) (Note 1) ID 58 Drain curr...


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