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TK100E10N1

Toshiba Semiconductor
Part Number TK100E10N1
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 10, 2014
Detailed Description TK100E10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E10N1 1. Applications • Switching Voltage Regulators 2. Featu...
Datasheet PDF File TK100E10N1 PDF File

TK100E10N1
TK100E10N1

Overview
TK100E10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E10N1 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.
8 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 1 ms) (Tc = 25) (Note 4) (Silicon limit) (Note 1,2) (Note 1,3) (Note 1) Symbol VDSS VGSS ID ID IDP PD EAS IAR Tch Tstg Rating 100 ±20 207 100 434 255 222 100 150 -55 to 150 W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltag...


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