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TK17J65U

Toshiba Semiconductor
Part Number TK17J65U
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 11, 2014
Detailed Description TK17J65U MOSFETs Silicon N-Channel MOS (DTMOS) TK17J65U 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK17J65U PDF File

TK17J65U
TK17J65U

Overview
TK17J65U MOSFETs Silicon N-Channel MOS (DTMOS) TK17J65U 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.
20 Ω (typ.
) High forward transfer admittance: |Yfs| = 12.
0 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) (Heatsink) 3: Source (S) TO-3P(N) 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Channel temperature Storage temperature (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 650 ±30 17 34 190 186 17 19 150 -55 to 150 W mJ A mJ  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2011-01-14 Rev.
1.
0 TK17J65U 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 0.
658 50 Unit /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 1.
14 mH, RG = 25 Ω, IAR = 17 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature Note: This transistor is sensitive to electrost...


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