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TK6A45DA

Toshiba Semiconductor
Part Number TK6A45DA
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 11, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK6A45DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK6A45DA PDF File

TK6A45DA
TK6A45DA

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK6A45DA 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 1.
1 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 3.
0 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V) (4) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK6A45DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 5.
5 A Drain current (pulsed) (Note 1) IDP 22 Power dissipation (Tc = 25) PD 35 W Single-pulse avalanche energy (Note 2) EAS 178 mJ Avalanche current IAR 5.
5 A Repetitive avalanche energy (Note 3) EAR 3.
5 mJ Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under hea...


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