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TK6A55DA

Toshiba Semiconductor
Part Number TK6A55DA
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 12, 2014
Detailed Description TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A55DA Switching Regulator Applications ...
Datasheet PDF File TK6A55DA PDF File

TK6A55DA
TK6A55DA

Overview
TK6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A55DA Switching Regulator Applications Ф3.
2 ± 0.
2 10 ± 0.
3 Unit: mm 2.
7 ± 0.
2 A 3.
9 3.
0 1.
14 ± 0.
15 2.
8 MAX.
2.
54 1 2 3 2.
6 ± 0.
1 13 ± 0.
5 0.
69 ± 0.
15 Ф0.
2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 550 ±30 5.
5 22 35 182 5.
5 3.
5 150 −55 to 150 Unit V V A W mJ A mJ °C °C 2.
54 0.
64 ± 0.
15 15.
0 ± 0.
3 • • • • Low drain-source ON-resistance: RDS (ON) = 1.
25 Ω (typ.
) High forward transfer admittance: |Yfs| = 3.
2 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA ⎯...


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